SVT085R5NT datasheet, mosfet equivalent, Silan Microelectronics

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Features and benefits

* 120A，85V，RDS(on)(typ.)=4.5m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D.

Description

The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide su.

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